EMT1 general purpose transistors (dual digital transistors) features z two 2sa1037 a k chips in a package z mounting possible with sot-56 3 automatic mounting machines z transistor elements are indep endent,eliminating interference marking: t1 equivalent circuit absolute maximum ratings (t a =25 ) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -150 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -6 v collector cut-off current i cbo v cb =-60v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-7v, i c =0 -0.1 a dc current gain h fe v ce =-6v, i c =-1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =-50ma, i b =-5ma -0.5 v transition frequency f t v ce =-12v, i c =-2ma, f=100mhz 140 mhz output capacitance c ob v cb =-12v, i e =0, f=1mhz 5 pf sot-563 1 tr 2 tr 1 (3) (2) (1) (4) (5) (6) www.htsemi.com semiconductor jinyu 1 date:2011/ 05
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